Structural characterization of partially relaxed InAlSb epitaxial epilayers grown on InSb substrates

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TypeArticle
Proceedings title22nd International Conference on the Physics of Semiconductors
Conference22nd International Conference on the Physics of Semiconductors, Vancouver, B.C., Canada, August 15-19, 1994
ISBN9810220219
9810229801
Volume2
Pages1516
Publication date
PublisherWorld Scientific
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338847
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Record identifier7f98c8cc-f2bc-4115-9022-942805c8e1c2
Record created2009-09-11
Record modified2016-05-09
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