Photoluminescence in UHV-CVD-grown Si[1-x]Ge[x] quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress

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DOIResolve DOI: http://doi.org/10.1016/S0040-6090(98)00466-0
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TypeArticle
Journal titleThin solid films
ISSN0040-6090
Volume321
IssueMay 26,
Pages158162; # of pages: 5
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
Identifier10276968
NRC number1115
NPARC number5764357
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Record identifier8058f970-ff3d-48ed-addd-383cd1099f61
Record created2009-03-29
Record modified2016-05-09
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