Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1063/1.3639292
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume110
Issue6
Article number63110
SubjectDissociation rates; GaN substrate; Green laser; Higher temperatures; Indium content; InGaN quantum wells; Laser structures; Lasing conditions; Lasing wavelength; Nitrogen fluxes; Optical qualities; Optically pumped; Piezo-electric fields; Plasma assisted molecular beam epitaxy; Dissociation; Electric fields; Epitaxial growth; Gallium nitride; Growth temperature; Indium; Molecular beam epitaxy; Pumping (laser); Quantum well lasers; Semiconductor quantum wells; Optically pumped lasers
AbstractWe report on optically pumped lasing at 500 nm on InGaN laser structures grown by plasma assisted molecular beam epitaxy. The InGaN laser structures were grown under group III-rich conditions on bulk (0001) GaN substrates. The influence of the nitrogen flux and growth temperature on the indium content of InGaN layers was studied. We demonstrate that at elevated growth temperatures, where appreciable dissociation rate for In-N bonds is observed, the indium content of InGaN layers increases with increasing nitrogen flux. We show that growth of InGaN at higher temperatures improves optical quality of InGaN quantum wells, which is crucial for green emitters. The influence of piezoelectric fields on the lasing wavelength is also discussed. In particular, the controversial issue of partial versus complete screening of built-in electric field at lasing conditions is examined, supporting the former case. © 2011 American Institute of Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271376
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Record identifier807cf13b-d693-4c89-81f3-814d0f539ebc
Record created2014-03-24
Record modified2016-05-09
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