One-flux analysis of current blocking in double-heterostructure bipolar transistors with composite collectors

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DOIResolve DOI: http://doi.org/10.1063/1.361107
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TypeArticle
Journal titleJournal of Applied Physics
Volume79
Issue5
Pages27622770; # of pages: 9
SubjectACCUMULATION LAYERS; BIPOLAR TRANSISTORS; CURRENT DENSITY; GRADED BAND GAPS; HETEROSTRUCTURES; IV CHARACTERISTIC
AbstractThe flux method of McKelvey, Longini, and Brody [Phys. Rev. 123, 51 (1961)] is used to analyze current blocking in double‐heterostructure bipolar transistors with composite collectors (CC). The effects of electron accumulation in the spacer layer are included; these are shown to impose an intrinsic limit on the simplest CC design. The analysis is extended to include compositional or band‐gap grading, which can substantially reduce the current blocking at high currents, though it has less effect at lower currents.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12329067
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Record identifier80a5d929-de59-42f6-8b77-00b9daa4d60f
Record created2009-09-10
Record modified2016-05-09
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