High energy proton and alpha radiation effects on GaAs/AlGaAs quantum well infrared photodetectors

  1. Get@NRC: High energy proton and alpha radiation effects on GaAs/AlGaAs quantum well infrared photodetectors (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1109/23.556899
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Journal titleIEEE Transactions on Nuclear Science
Pages30123018; # of pages: 7
Subject0.8 to 10 MeV; alpha radiation effects; alpha-particle effects; aluminium compounds; dark conductivity; dark current; detection capability; device complexity; fluence levels; GaAs/AlGaAs quantum well infrared photodetectors; GaAs-AlGaAs; gallium arsenide; high energy proton radiation effects; III-V semiconductors; infrared detectors; infrared imagery; infrared imaging; monolithic two-dimensional arrays; optical fabrication; optical testing; particle energies; permanent radiation damage; photodetectors; proton effects; radiated devices; radiation hardening; radiation hardness; semiconductor device testing; semiconductor quantum wells; spectral response; wide infrared wavelength region
AbstractGallium arsenide quantum well infrared photodetectors (QWIPs) are ideally suited for infrared imagery due to their detection capability over a wide infrared wavelength region and the feasibility of fabrication of monolithic two-dimensional arrays of such detectors. This paper reports on the effects of high energy proton and alpha particle radiations on the performance of these devices. The particle energies ranged from 0.8 MeV to 10.0 MeV and the fluences used in this work ranged from 1011 to 1016 cm-2. The dark current and spectral response of these radiated devices were measured at different fluence levels. Using the spectral response as a measure of device performance, it is concluded that the device performance decreases with fluence and the degradation due to alpha particles is greater than for protons of the same energy. Further, the damage to device performance decreases with the increase in the energy of both types of these radiations. From prior work, it was expected that these devices would be sensitive to permanent radiation damage. The extent of damage, however, could not be pre-judged due to the device complexity. These are the first reported measurements of radiation hardness of QWIPs
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328318
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Record identifier80acf6f5-3bf2-41e7-a2a8-dc0effff607a
Record created2009-09-10
Record modified2016-05-09
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