Ultraclean emission from InAsP quantum dots in defect-free wurtzite InP nanowires

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DOIResolve DOI: http://doi.org/10.1021/nl303327h
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TypeArticle
Journal titleNano Letters
ISSN1530-6984
1530-6992
Volume12
Issue11
Pages59195923; # of pages: 5
SubjectNanowire; Qauntum dot; InAs/InP; Single photon source; Chemical beam epitaxy; Selective-area VLS growth
AbstractWe report on the ultraclean emission from single quantum dots embedded in pure wurtzite nanowires. Using a two-step growth process combining selective-area and vapor–liquid–solid epitaxy, we grow defect-free wurtzite InP nanowires with embedded InAsP quantum dots, which are clad to diameters sufficient for waveguiding at λ 950 nm. The absence of nearby traps, at both the nanowire surface and along its length in the vicinity of the quantum dot, manifests in excitonic transitions of high spectral purity. Narrow emission line widths (30 μeV) and very-pure single photon emission with a probability of multiphoton emission below 1% are achieved, both of which were not possible in previous work where stacking fault densities were significantly higher.
Publication date
LanguageEnglish
AffiliationInformation and Communication Technologies; Security and Disruptive Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21268908
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Record identifier8104ff01-7bd2-49e9-9d30-d866f6b9a0b1
Record created2013-11-25
Record modified2016-05-09
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