Structural and optical properties of axial silicon-germanium nanowire heterojunctions

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DOIResolve DOI: http://doi.org/10.1063/1.4937345
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume118
Pages23430-1234301-8
Subjectgermanium; elemental semiconductors; photoluminescence; semiconductor insulator; semiconductor structures; Raman spectra
AbstractDetailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.
Publication date
LanguageEnglish
AffiliationMeasurement Science and Standards; National Research Council Canada
Peer reviewedYes
NPARC number21277148
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Record identifier8283ffbf-e8c6-4048-97e6-15b22e5c8bc9
Record created2015-12-18
Record modified2016-05-09
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