Visible photoluminescence from biexcitons in Si1-xGex quantum wells

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DOIResolve DOI: http://doi.org/10.1016/0038-1098(94)90206-2
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TypeArticle
Journal titleSolid state communications
ISSN0038-1098
Volume89
IssueFebruary 5
Pages429432; # of pages: 4
AbstractWe have observed visible photoluminescence, at photon energies nearly twice those of the usual near-infrared excitonic emissions, from thin Si1-xGex quantum wells at liquid He temperatures. This confirms that a significant biexciton population is present in such samples under excitation conditions normally used for near-infrared photo-luminescence measurements. The intensity of the visible luminescence increases linearly with excitation density, consistent with the biexcitons being localized by fluctuations in alloy content. The biexciton lifetime is observed to vary with the Si1-xGex quantum well width indicating an enhancement of the overlap of the particle wave functions by the quantum confinement.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10111086
NRC number1163
NPARC number8896884
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Record identifier83003cf9-b6ff-4c9e-b799-0463862f6640
Record created2009-04-22
Record modified2016-05-09
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