Characterization of gadolinium and lanthanum oxide films on Si (100)

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DOIResolve DOI: http://doi.org/10.1116/1.1463079
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TypeArticle
Journal titleJournal of Vacuum Science and Technology A
Volume20
Issue3
Pages11411144; # of pages: 4
SubjectLanthanum; Gadolinium; Thin films; Annealing; Thin film structure
AbstractHigh-resolution transmission electron microscopy, electron energy loss spectroscopy, and Auger electron spectroscopy, were used to study gadolinium and lanthanum oxide films deposited on Si (100) substrates using electron-beam evaporation from pressed-powder targets. As-deposited films consist of a crystalline oxide layer and an amorphous interfacial layer. A complicated distinct multilayer structure consisting of oxide layers, silicate layers, and SiO2-rich layers in thick (∼30 nm) annealed films has been observed for both gadolinium and lanthanum films. For thinner annealed films (∼8 nm), there is no longer a crystalline oxide layer but an amorphous gadolinium or lanthanum silicate layer and an interfacial SiO2-rich layer. The formation of the lanthanum silicate by annealing lanthanum oxide is found to be thermodynamically more favorable than the formation of gadolinium silicate.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744506
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Record identifier833fd7d1-cd1b-4d77-9445-625a8a22d512
Record created2009-10-27
Record modified2016-05-09
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