Sulfide-assisted reordering at the InP surface and SiNx/InP interface

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DOIResolve DOI: http://doi.org/10.1116/1.579801
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TypeArticle
Journal titleJournal of Vacuum Science & Technology A
Volume13
Issue3
Pages652657; # of pages: 6
AbstractThe structural and chemical changes induced by the annealing of InP which has been exposed to gas-phase polysulfide, a known passivation method for the reduction of surface states for InP, were investigated using in situ low-energy electron diffraction (LEED), thermal desorption spectrometry, and x-ray photoelectron spectroscopy (XPS). A diffused InP (1×1) LEED pattern was observed on InP which had been exposed to ultraviolet/O3 followed by etching with a 1:30 HF solution. The (1×1) LEED pattern became sharper after the gas-phase polysulfide exposure and the subsequent annealing. The sharpest pattern was obtained after annealing at 400 °C. Accompanying these structural changes were the desorptions of species containing H and S at 300 °C and the species containing H, S, and P at 400 °C. XPS analyses showed that during the structural changes, the multiple sulfide species on the as-exposed surface were converted to a single relatively stable In–S species as a result of appropriate annealing. Similar chemical changes of sulfide species were obtained at the SiNx/InP interface. The results suggest that sulfide assisted the reordering of the InP surface, thus leading to the reduction in interface state densities which were determined by capacitance–voltage measurements.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number20154416
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Record identifier8604ace4-d50f-4dbe-b9a1-9da9d46bca72
Record created2012-06-22
Record modified2016-05-09
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