An infrared reflection technique for characterization of GaN epitaxial films

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DOIResolve DOI: http://doi.org/10.1149/1.1392442
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TypeArticle
Journal titleJournal Of The Electrochemical Society
Volume146
Issue8
Pages31243127; # of pages: 4
AbstractAn infrared spectroscopic technique has been developed for the characterization of GaN epitaxially grown thin films on sapphire substrates. The technique is complementary to Raman measurements, and provides information on the longitudinal (LO) and transverse optical modes of GaN, and, for thin GaN films, the sapphire substrate. In addition, the free carrier concentration of the GaN can be characterized by analyzing the LO phonon-plasmon coupled mode present in doped samples. For lightly doped films, the GaN film thickness is easily obtained from the Fabry-Perot fringes present in the spectra. �1999 The Electrochemical Society. All rights reserved.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329214
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Record identifier86540206-334a-40fb-9ebd-5298a9ab9025
Record created2009-09-10
Record modified2016-05-09
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