Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2013.10.019
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TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
AbstractWe have developed a model which integrates calculation of InAlGaAs multiple quantum well (MQW) transition energies using the envelope function approximation with a statistical analysis of the PL emission wavelength, net strain and MQW period measured for a variety of MQW designs grown by MOCVD. The model relates the measured MQW parameters directly to MOCVD process parameters, allowing an accurate prediction of the process parameters required to grow a specified MQW design. This greatly reduces the need to grow and characterize individual calibration layers. The difference of the measured and predicted MQW parameters is recorded run-to-run over time, which allows process variability to be analyzed across a number of process parameters with intentional variations to grow different MQW designs. Crown Copyright © 2013.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Canadian Photonics Fabrication Centre (CPFC-CCFDP)
Peer reviewedYes
NPARC number21269932
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Record identifier86b72ee3-90c2-4493-a3a8-4fb274c70252
Record created2013-12-13
Record modified2016-05-09
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