Cyanoethylated pullulan as a high-k solution processable polymer gate dielectric for SWCNT TFTs

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DOIResolve DOI: http://doi.org/10.1016/j.orgel.2016.12.045
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TypeArticle
Journal titleOrganic Electronics
ISSN1566-1199
Volume42
Pages329336
Subjectpolymer dielectric; thin film transistor; carbon nanotubes; printable electronics
AbstractCyanoethylated pullulan (CEP), a high-k solution processable polymer gate dielectric, is used to fabricate bottom gated single wall carbon nanotube (SWCNT) network thin film transistors (TFTs). Both aqueous and organic dispersions of highly semiconducting enriched SWCNTs are used as the channel material. Use of CEP as the dielectric enables fabrication of devices operating at low voltage (<3 V) with high on-state currents, good on/off ratios (∼105), low subthreshold swings (∼200 mV/decade) and minimal hysteresis (<1 V). However, despite high apparent mobilities extracted from gate voltage sweeps, driving these devices at even modest frequencies (>1 Hz) is found to significantly decrease the transconductance. This is shown to be related to a significant frequency dependence of the capacitance associated with a slow polarization response of the dielectric. Despite this limitation, CEP could be a useful dielectric in SWCNT TFTs for applications such as sensors and low frequency amplifiers.
Publication date
LanguageEnglish
AffiliationMeasurement Science and Standards; Energy, Mining and Environment; Security and Disruptive Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23001327
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Record identifier86e706e6-4204-4728-97a5-6af6fa51e331
Record created2017-01-17
Record modified2017-01-17
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