Simultaneous multiple file EXAFS analysis: methodology and application to buried Ge–Si interfaces

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DOIResolve DOI: http://doi.org/10.7567/JJAPS.32S2.134
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TypeArticle
Proceedings titleXAFS VII: proceedings of the 7th International Conference on X-ray Absorption Fine Structure, Kobe, Japan, August 23-29, 1992
Series titleJapanese Journal of Applied Physics; Volume 32
ConferenceXAFS VII, the 7th International Conference on X-ray Absorption Fine Structure, August 23-29, 1992, Kobe, Japan
ISSN0021-4922
1347-4065
Pages134136
SubjectEXAFS; multi-file analysis; Si-Ge interface; atomic-layer superlattices; epitaxy
AbstractProcedures for constrained simultaneous non-linear least squares curve fits of multiple EXAFS spectra are described and their advantages discussed. The techniques are illustrated by polarisation-dependent GeK EXAFS studies of buried Ge-Si interfaces in strained layer [(Si)m(Ge)n]p/Si(100) superlattices grown by molecular beam epitaxy (MBE).
Publication date
PublisherIOP Publishing
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number23000867
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Record identifier87b05cec-9cb9-4f7b-92fb-c24f560cb749
Record created2016-10-26
Record modified2016-10-26
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