Temperature effects on the radiative recombination in self-assembled quantum dots

DOIResolve DOI: http://doi.org/10.1016/0039-6028(96)00532-8
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TypeArticle
Proceedings titleProceedings of the Eleventh International Conference on the Electronic Properties of Two-Dimensional Systems
Series titleSurface Science; Volume 361-362
Conference11th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS XI), Nottingham, UK, August 7-11, 1995
Pages778782; # of pages: 5
SubjectGallium arsenide; Indium arsenide; Molecular beam epitaxy; Photoluminescence; Quantum effects; Quantum wells; Self-assembly; Surface tension
AbstractSeveral ensembles of self-assembled quantum dots (QDs) based on the AlInAsAl/GaAs and InGaAs/GaAs material systems have been investigated using photoluminescence (PL), PL excitation (PLE) and time-resolved PL (TRPL). The influence of the temperature is measured by monitoring sharp spectral features (as narrow as 90 μeV) obtained when probing the PL of small QD ensembles (few hundreds QDs). Thermionic emission of the photocarriers out of the QD potential is found to be the dominant mechanism leading to the thermal quenching of the PL and temperature-independent linewidths are observed up to the onset of the PL quenching.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328785
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Record identifier88d1c8ee-2ea6-4a8b-a52f-f9035233112b
Record created2009-09-10
Record modified2016-05-09
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