X-Ray Photoelectron Spectroscopy of Gate-Quality Silicon Oxynitride Films Produced by Annealing Plasma-Nitrided Si(100)in Nitrous Oxide

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DOIResolve DOI: http://doi.org/10.1149/1.1374219
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TypeArticle
Journal titleJournal of the Electrochemical Society
Volume148
Issue7
PagesF140F147
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744733
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Record identifier88e164bc-e4a9-4fce-a773-8ecef5b069aa
Record created2009-10-27
Record modified2016-05-09
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