Amorphization threshold in Si-implanted strained sige alloy layers

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DOIResolve DOI: http://doi.org/10.1557/PROC-373-511
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TypeArticle
Proceedings title1994 MRS Fall Meeting: Symposium Y: Microstructure of Irradiated Materials
Series titleMaterials Research Society Symposia Proceedings; no. 373
Conference1994 MRS Fall Meeting: Symposium Y: Microstructure of Irradiated Materials, November 29 - December 1, 1994, Boston, MA
ISSN0272-9172
ISBN1558992758
9781558992757
Pages511516; # of pages: 6
AbstractWe have examined the damage produced by Si-ion implantation into strained Si₁₋ₓGeₓ epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channelling techniques to determine the amorphization threshold in strained Si₁₋ₓGeₓ, (x = 0.16 and 0.29) over the temperature range 30-110°C. The results are compared with previously reported measurements on unstrained Si₁₋ₓGeₓ, and with the simple model used to describe those results. We report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer.
Publication date
PublisherCambridge University Press
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12339341
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Record identifier89f7d215-f251-4818-a9e0-8233ed7aa355
Record created2009-09-11
Record modified2016-05-09
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