Electron-phonon interactions in a single modulation-doped GaInAs quantum well

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DOIResolve DOI: http://doi.org/10.1209/0295-5075/92/37002
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TypeArticle
Journal titleEPL (Europhysics Letters)
Volume92
Issue3
Pages37002-p137002-p6; # of pages: 6
AbstractPrecise absolute far–infra-red magneto-transmission experiments have been performed under magnetic fields up to 28T on a series of single Ga0.24In0.76As quantum wells n-type modulation doped at different levels. The transmission spectra have been simulated with a multilayer dielectric model. This allows us to extract the imaginary part of the optical response function which reveals new singular features related to electron-phonon interactions. In addition to the expected polaronic effects due to the longitudinal (LO) phonons, one observes other interactions with the transverse optical (TO) phonons and a new kind of carrier concentrationdependent interaction with interface phonons. This system provides a unique opportunity to study multiple types of electron-phonon interactions in a single type of compound.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17401042
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Record identifier8aa42e44-7703-4c5f-8273-607a81ff41e7
Record created2011-03-26
Record modified2016-05-09
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