Growth of high performance GaN modulation-doped field-effect transisters by ammonia-molecular-beam-epitaxy

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DOIResolve DOI: http://doi.org/10.1116/1.582255
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TypeArticle
Journal titleJournal of Vacuum Science & Technology A
Volume18
Issue2
Pages652655; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12338042
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Record identifier8b498b96-4402-4912-be82-62440bdd32c0
Record created2009-09-10
Record modified2016-05-09
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