Threshold dose for ion-induced intermixing in InGaAs/GaAs quantum wells

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DOIResolve DOI: http://doi.org/10.1063/1.111584
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TypeArticle
Journal titleApplied Physics Letters
Volume64
Issue18
Pages24122414; # of pages: 3
AbstractWe have determined the threshold dose for 8 MeV Bi+ ions to induce intermixing of GaAs quantum wells in AlGaAs and InGaAs quantum wells in GaAs after rapid thermal annealing at 850 �C. Our measured threshold for the GaAs/AlGaAs system agrees well with previous work. The threshold for the InGaAs/GaAs system is much lower and explains, at least in part, earlier difficulties in the lateral patterning of nanostructures by focused-ion-beam lithography.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337877
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Record identifier8b757548-4e70-4c19-9724-1c7ec27619dc
Record created2009-09-10
Record modified2016-05-09
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