Electronic Structure of InAs/GaAs self-assembled quantum dots studied by high excitation luminescence in magnetic fields up to 73T

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DOIResolve DOI: http://doi.org/10.1016/j.physb.2004.01.121
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TypeArticle
Journal titlePhysica. B, Condensed matter
Volume346-347
Pages432436; # of pages: 5
AbstractWe report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-assembled quantum dots with large inter-shell spacing (75 [text not readable] V) in magnetic fields up to 73 T. The PL spectra show a complex picture of levels splitting and crossings. A simple two-band single-particle model provides a good approximation to explain the observed magneto-PL spectra.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744696
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Record identifier8ccc32e7-44fe-4f87-86f6-10258361c357
Record created2009-10-27
Record modified2016-05-09
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