Interfacial growth of HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO

Download
  1. (PDF, 287 KB)
  2. Get@NRC: Interfacial growth of HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.1608488
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
Volume83
Issue13
Pages26382640; # of pages: 3
Subjectthin film growth; thin films; annealing; dielectric thin films; interface diffusion
AbstractThe interfacegrowth by oxygen diffusion has been investigated for 5 nm thick HfOxNy gate-quality dielectric films deposited on Si(100) by low-pressure pulsed metalorganic chemical vapor deposition.Analysis by x-ray photoelectron spectroscopy of the films deposited using the precursor tetrakis (diethylamido) hafnium with O2 showed that the films contained 4 at. % nitrogen. This increased to 11 at. % N when NO was used as the oxidant. Significant growth of the interface layer was observed for films exposed to air at ambient temperature and lower rates of growth were observed for vacuum annealedfilms and those with the higher N content. For filmsannealed in O2 at temperatures in the range 600–900 °C, the activation energies of the interfacial growth were 0.36 and 0.25 eV for N concentrations of 11 and 4 at. %, respectively. The results were interpreted in terms of atomic oxygen formation in the bulk and reaction at the interface. The increase in N incorporation from 4 to 11 at. % increases the crystallization temperature from between 500 and 600 °C to between 600 and 700 °C.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744313
Export citationExport as RIS
Report a correctionReport a correction
Record identifier8d472442-7a67-495a-8d2d-aeee49a23014
Record created2009-10-27
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)