Influence of the initial electrochemical potential on the growth mechanism and properties of anodic oxides on (100) Si

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DOIResolve DOI: http://doi.org/10.1149/1.1837129
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TypeArticle
Journal titleJournal Of The Electrochemical Society
Volume143
Issue9
Pages29312938; # of pages: 8
Subjectannealing; anodised layers; electric potential; electrochemical electrodes; electrolytes; microelectrodes; oxidation; polarisation; silicon; thickness control
AbstractThe effect of electrode area and anodic growth mode on the thickness and properties of anodic oxides on (100) Si were investigated. The oxide thickness depends strongly on the electrode area for the growth mode where the electrode was in contact with the electrolyte before the anodic potential was applied as a step to 8 VSCE, reaching a maximum for microelectrodes of ~10⁻³ cm² area. In contrast, if the potential was deliberately ramped at 100 mV/s from the open-circuit potential to the final growth potential, the oxide thickness was independent of sample size. Thinner oxides with superior electrical response (as evaluated by ac impedance spectroscopy) were obtained using a ramped mode of growth. In order to fabricate macroelectrodes with the properties of microelectrodes, the potentiostat was stepped to the desired potential and then the sample was gradually manually lowered into the electrolyte. It was concluded that the mechanism by which the first few layers of oxide on (100) Si are formed is of crucial importance in establishing the mechanism of oxide growth for the entire oxide film.
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LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12339040
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Record identifier8d5ddcf7-00bd-4136-a34d-6b27a0a85d4f
Record created2009-09-11
Record modified2016-05-09
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