Bandgap shifted InGaAsP/InP quantum well waveguides using MeV ion implantation

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DOIResolve DOI: http://doi.org/10.1049/el:19951415
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TypeArticle
Journal titleElectronics Letters
Volume31
Issue24
Pages20942095; # of pages: 2
Subjectabsorption constant; bandgap shifted optical waveguides; blue shift; InGaAsP-InP; junction characteristics; MeV ion implantation; OEIC; p-i-n laser structure; quantum well waveguides; semiconductor lasers
AbstractA large blue shift of the bandgap 90 nm, in an 1nGaAsP/InP quantum well (QW) pin laser structure using a single-step MeV phosphorous ion implantation is reported. The absorption constant at the original band-edge was reduced from 110 cm-1 to only 4 cm-1. No excess loss in the waveguide due to the QW intermixing process was observed. Current/voltage measurements indicate that junction characteristics are well maintained, providing a means of producing side-by-side active and passive sections using a simple, single processing step on laser structures fabricated using standard growth techniques.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for Aerospace Research
Peer reviewedNo
NPARC number12334529
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Record identifier8dd79fce-5367-47b2-9969-25e4853b8b4e
Record created2009-09-10
Record modified2016-05-09
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