Selective epitaxy of semiconductor nanopyramids for nanophotonics

Download
  1. (PDF, 2 MB)
  2. Get@NRC: Selective epitaxy of semiconductor nanopyramids for nanophotonics (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1088/0957-4484/21/29/295302
AuthorSearch for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleNanotechnology
Volume21
Issue29
Pages17; # of pages: 7
AbstractWe present a detailed study of the parameters which affect the geometrical perfection of nanopyramids used for the site-selected nucleation of quantum dots. Through an understanding of crystal facet formation, we demonstrate that undesirable high index planes can be suppressed using carefully optimized lithography together with properly orientated source fluxes in the growth reactor. High quality InP nanopyramids are reported with individual InAs/InP quantum dots positioned with high precision. This represents an important milestone for the fabrication of complex quantum dot based nanophotonic devices.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17326695
Export citationExport as RIS
Report a correctionReport a correction
Record identifier8e0bbb9b-88c2-4360-b995-915137635cf6
Record created2011-03-26
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)