Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices

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DOIResolve DOI: http://doi.org/10.1002/1521-396X(200111)188:1<233::AID-PSSA233>3.0.CO;2-0
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TypeArticle
Journal titlephysica status solidi (a)
Volume188
Issue1
Pages233237; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12744530
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Record identifier8e729b97-8eca-462f-914f-deb0c1bf1ddc
Record created2009-10-27
Record modified2016-05-09
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