Trimming the size of InAs/InP quantum dots grown by CBE

DOIResolve DOI: http://doi.org/10.1109/ICIPRM.2000.850316
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TypeArticle
Proceedings titleIndium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference2000 International Conference on Indium Phosphide and Related Materials, 14-18 May 2000, Williamsburg, Virginia, USA
ISBN0780363205
Pages396399; # of pages: 4
AbstractWe have used transmission electron microscopy and low temperature photoluminescence to study the growth by chemical beam epitaxy of self-assembled InAs/InP quantum dots. Square dots 30-40 nm in width were grown with a density of 1010 cm-2. By partially covering the dots with InP and exposing them to a phosphorus overpressure the mean height of the dots, and hence their emission energies, could be controlled. The emission energy was found to be strongly dependent on the amount of InP used to partially cover the InAs dots, but only weakly dependent on the phosphorus exposure time for times greater than 15 sec
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NRC number1101
NPARC number5765181
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Record identifier8fb9c1ac-8a6c-4104-bcce-e8ade17f0c1b
Record created2009-03-29
Record modified2016-05-09
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