Photoluminescence from Si1−xGex strained layers grown by atmospheric pressure chemical vapor deposition

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DOIResolve DOI: http://doi.org/10.1063/1.350433
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TypeArticle
Journal titleJournal of applied physics
ISSN0021-8979
Volume71
Issue12
Pages62016203; # of pages: 3
AbstractLow temperature photoluminescence due to the self-annihilation of bound excitons has been observed in Si1−xGex strained layers grown using atmospheric pressure chemical vapor deposition. Samples were grown at temperatures near 1000 °C with growth rates up to 1000 nm per minute allowing short growth times, thus preventing extensive interdiffusion at layer interfaces. Well-resolved, bulk-like photoluminescence spectra with narrow no phonon linewidths were observed from strained SiGe material indicating it to be of suitable electronic quality. For a sample consisting of 120 nm of Si0.92Ge0.08 capped with 90 nm of Si on a Si(100) substrate, the photoluminescence spectrum exhibited Si1−xGex bound exciton lines with resolved no phonon and transverse optic phonon components.
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; National Research Council Canada
Peer reviewedYes
Identifier10011936
NRC number1151
NPARC number8899468
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Record identifier901e8bc8-9e03-4390-896e-5d55cb9129b7
Record created2009-04-22
Record modified2017-03-23
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