Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diode

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DOIResolve DOI: http://doi.org/10.1063/1.119058
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TypeArticle
Journal titleApplied Physics Letters
Volume70
Issue21
Pages27842786; # of pages: 3
Subjectaluminium compounds; CCD image sensors; gallium arsenide; III-V semiconductors; indium compounds; infrared detectors; infrared imaging; integrated optoelectronics; light emitting diodes; optical frequency conversion; photodetectors; semiconductor epitaxial layers; semiconductor quantum wells
AbstractWe present experimental results which support a recently proposed scheme for infrared imaging through the combined use of a photon frequency up-conversion device with a charge coupled device (CCD) camera. The epitaxial device consists of a long wavelength p-type GaAs/AlGaAs quantum well infrared photodetector (QWIP) on top of which is grown a shorter wavelength InGaAs/GaAs light emitting diode (LED). Upon long wavelength infrared excitation of the QWIP, near infrared light is generated by the LED whose output is directed towards a commercial CCD array where the up-converted image of the long wavelength infrared source object is formed.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337918
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Record identifier9041a654-91cd-4e59-9ecd-6a6aa868dc7e
Record created2009-09-10
Record modified2016-05-09
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