Hot electron energy relaxation in AlGaN/GaN heterostructures

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/19/4/144
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TypeArticle
Journal titleSemiconductor science and technology
Volume19
Issue4
PagesS440S442
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12744919
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Record identifier9085fa39-0d9e-48d1-9a99-f0b339d0104b
Record created2009-10-27
Record modified2016-05-09
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