Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation

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DOIResolve DOI: http://doi.org/10.1063/1.1368185
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TypeArticle
Journal titleApplied Physics Letters
Volume78
Issue17
Pages2509
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744514
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Record identifier9088d714-602b-48bf-a95c-5bc5e17c220a
Record created2009-10-27
Record modified2016-05-09
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