Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

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DOIResolve DOI: http://doi.org/10.1016/j.jssc.2013.02.002
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TypeArticle
Journal titleJournal of Solid State Chemistry
ISSN0022-4596
Volume201
Pages3540; # of pages: 6
SubjectSemiconducting metal-oxide; Surface characterization; Electron transport; Conductometric analysis; Activation energy; Oxygen states
AbstractCuWO4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO4 thin-films was determed over the 100-500 degree Celsius temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300 degrees Celsius and 500 degrees Celsius have been measured for oxygen partial pressures (0.1 atm less than p(O2) less than 0.9 atm) in nitrogen. The apparent activation energy (delta)Ea for the electrical conduction has been estimated. The study of the temperature effect on the electron transport properties of CuWO4 thin-films reveals the operation of two temperature-dependent oxygen states. The effect of varying oxygen concentration on the electronic properties is discussed in detail. The electrochemical nature of the operating oxygen states for the 100-500 degree Celsius temperature range is deduced using a physicochemical model that relates electronic conductivity with oxygen partial pressure and temperature.
Publication date
LanguageEnglish
AffiliationEnergy, Mining and Environment; National Research Council Canada
Peer reviewedYes
IdentifierS0022459613000777
NRC number53116
NPARC number21268499
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Record identifier90b48cb0-8dc6-4ee8-8791-1c1c7ac31811
Record created2013-08-16
Record modified2017-03-23
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