Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing

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DOIResolve DOI: http://doi.org/10.1063/1.2357162
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TypeArticle
Journal titleApplied Physics Letters
Volume89
Issue13
Pages131905-1131905-3
AbstractThis paper examines the influence of rapid thermal annealing on the photoluminescence spectra of self-assembled InAs/InP(001) quantum dots capped with 760 nm InP deposited at a reduced temperature. The capping layer contained a large concentration of point defects that can promote interdiffusion upon annealing. The onset temperature for measurable blueshift in the emission spectra was found to be ∼ 600 °C whereas shifts of 270 meV were obtained after annealing at 750 °C for 300 s. Gradual etching of the InP capping layer enabled to progressively quench energy shifts upon annealing, a promising result for spatially selective emission tuning.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; Executive Offices; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744020
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Record identifier92134919-926f-4418-9864-103926203ab7
Record created2009-10-27
Record modified2016-05-09
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