Role of buried cracks in mitigating strain in crack free GaN grown on Si(111) employing AlN interlayer schemes

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Proceedings titleJournal of Crystal Growth
ConferenceProceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), August 22–27, 2010, Berlin, Germany
Pages413417; # of pages: 5
Subjectmolecular beam epitaxy; gallium nitride; strain relaxation; buried cracks
AbstractThis paper investigates the effect of buried cracks in the AlN interlayer buffer on mitigation of the large, tensile, thermal expansion mismatch strain in the GaN/Si system, which is a key hurdle for achieving crack free GaN epitaxy on silicon. The thermally induced strain is determined by temperature-dependent, high-resolution X-ray diffraction measurements carried out from room temperature up to the growth temperature. It is found that in addition to the balancing effect of compressive lattice-mismatch strain induced by the AlN interlayers, buried cracks in the AlN interlayer region can also relax some of the thermal expansion mismatch strain through elastic distortion at crack edges. The degree of relaxation is dependent on the spacing-to-height aspect ratio of the buried cracks, consistent with prediction of crack-edge-induced relaxation models.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number19542541
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Record identifier93018b5f-b20c-4bd9-9e03-e08c1524c7b2
Record created2012-02-29
Record modified2016-05-09
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