Selective-area vapor-liquid-solid growth of tunable InAsP quantum dots

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DOIResolve DOI: http://doi.org/10.1063/1.3600777
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TypeArticle
Journal titleApplied Physics Letters
Volume98
Issue25
Pages251101
AbstractA process is described where the position, size, and cladding of an InP nanowire with an embedded InAsP quantum dot are determined by design through lithography, processing, and growth. The vapor-liquid-solid growth mode on a patterned substrate is used to grow the InP core and defines the quantum dot size to better than ±2 nm while selective-area growth is used to define the cladding thickness. The clad nanowires emit efficiently in the range λ = 0.95–1.15 μm. Photoluminescence measurements are used to quantify the dependence of the excitonic energy level structure on quantum dot size for diameters 10–40 nm.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number18194622
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Record identifier93b037c3-38cd-4881-9998-7b26f266cee5
Record created2011-07-05
Record modified2017-03-23
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