Growth and characterisation of high electron mobility transistors on 4H-SiC by ammonia molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1002/1521-396X(200111)188:1<271::AID-PSSA271>3.0.CO;2-T
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TypeArticle
Journal titlePhysica Status Solidi A: Applications and Materials Science
Volume188
Issue1
Pages271274; # of pages: 4
AbstractThe growth of GaN/AlGaN high electron mobility transistor structures (HEMT) on 4H-SiC by ammonia molecular beam epitaxy (a-MBE) is reported. Structures were grown using a magnetron sputter epitaxy deposited AlN buffer layer prior to the MBE growth of a carbon-doped insulating GaN isolation layer, undoped GaN channel layer and AlGaN cap layer. No ex-situ or in-situ high temperature pre-treatment of the SiC substrate was used. The electrical characteristics of the layers was excellent with RT mobilities of >1100 cm2/Vs for a sheet carrier density of >1 ? 1013 cm?-?2. HEMTs fabricated from layers gave an ft and fmax of 36 and 80 GHz, respectively with a maximum saturated drain current of 450 mA/mm and transconductance of 160 mS/mm for a gate length of 0.3 mum.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337880
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Record identifier93b1e505-7d3b-4ef8-984a-50c8859e3424
Record created2009-09-10
Record modified2016-05-09
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