Pulsed laser ablation : a method for deposition and processing of semiconductors at an atomic level

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DOIResolve DOI: http://doi.org/10.4028/www.scientific.net/MSF.173-174.73
AuthorSearch for:
EditorSearch for: Briege, M.; Search for: Dittrich, H.; Search for: Klose, M.; Search for: Schock, H.W.; Search for: Werner, J.
TypeArticle
Proceedings titleMaterials Science Forum
ConferenceFirst International Symposium on Semiconductor Processing and Characterization with Lasers: Applications in Photovoltaics, April 1994, Stuttgart, Germany
ISSN02555476
Volume173-174
Pages7380; # of pages: 8
AbstractThe results of pulsed laser ablation are reviewed with a focus on the feasibility of this approach for atomic level processing. We have developed a pulsed laser evaporation and epitaxy (PLEE) method, with two lasers used for simultaneous or sequential ablation of different targets, for the deposition of quantum wells and superlattices of some II-VI semiconductor materials. The unique potential of PLEE exists in bandgap engineering of ternary structures with an arbitrarily changing chemical composition. Another new and rapidly developing application of pulsed laser ablation is low-fluence laser etching. We have been exploring this approach with a laser-assisted dry etching ablation (LADEA) system for the microfabrication of various structures in materials viable for advanced microelectronics and optoelectronics. Using InP it has been demonstrated that the process of material removal can be carried out at rates well below one atomic layer per UV excimer laser pulse. An investigation of the surface morphology of LADEA-processed material indicates the feasibility of the method in achieving an atomic level control.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328053
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Record identifier948f0971-6446-4589-93d1-6aafcc0fd71e
Record created2009-09-10
Record modified2016-05-09
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