Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

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DOIResolve DOI: http://doi.org/10.1063/1.2199457
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TypeArticle
Journal titleApplied Physics Letters
Volume88
Issue17
Pages172110
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12743887
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Record identifier94cbb96c-2f48-46c0-8171-7b821153d8ef
Record created2009-10-27
Record modified2016-05-09
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