Room-temperature continuous-wave opertation of GaInNAsSb laser diodes at 1.55μm

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DOIResolve DOI: http://doi.org/10.1049/el:20052712
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TypeArticle
Journal titleElectronics Letters
ISSN0013-5194
Volume41
Issue19
Pages10601062; # of pages: 3
AbstractThe first 1.55 µm room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3×589 µm device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70°C.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744226
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Record identifier95048afa-528e-4c6f-b265-fb1ff44d60c0
Record created2009-10-27
Record modified2016-05-09
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