Effect of Antiphase Boundaries on Electrical Transport Properties of Fe3O4 Nanostructures

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DOIResolve DOI: http://doi.org/10.1063/1.1952572
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TypeArticle
Journal titleApplied Physics Letters
Volume86
Issue25
Pages252507-1252507-3; # of pages: 3
AbstractFe3O4 nanowires have been fabricated based on Fe3O4 thin films grown on a-Al2O3 s0001d substrates using the hard mask and ion milling technique. Compared with thin films, the Fe3O4 nanowire exhibits a slightly sharper Verwey transition but pronounced anisotropic magnetoresistance properties in the film plane at low magnetic field. Detailed bias-dependence study of both the conductance and magnetoresistance curves for both the thin films and nanowires suggests that the electrical conduction in magnetite near and above the Verwey transition temperature is dominated by a tunneling mechanism across antiphase boundaries.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Industrial Materials Institute
Peer reviewedYes
NRC number53798
NPARC number15973259
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Record identifier959359a6-1943-4e99-9915-944a707a47d3
Record created2010-08-18
Record modified2016-05-09
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