Band alignment of Si1-xGex and Si1-x-y.GexCy quantum wells on Si(001)

DOIResolve DOI: http://doi.org/10.1557/PROC-533-235
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings title1998 MRS Spring Meeting - Symposium FF – Epitaxy and Applications of Si-Based Heterostructures
Series titleMaterials Research Society Symposia Proceedings; no. 533
Conference1998 MRS Spring Meeting - Symposium FF – Epitaxy & Applications of Si-Based Heterostructures, 13-17 April 1998, San Francisco, California, USA
ISBN1558994394
Pages235244; # of pages: 10
AbstractRecent low-temperature photoluminescence (PL) studies will be discussed for coherent Si1-xGex. and Si1-xGexCy alloy multiple quantum wells on Si (001) substrates grown by either ultra-high vacuum chemical vapour deposition or solid source molecular beam epitaxy. An in-plane applied-stress technique will be described which removes systematically band edge degeneracies revealing the lower, PL-active CB. Applied-stress data taken with this technique at ultra-low excitation intensity proved intrinsic type II CB alignment in SiGe on Si (001). Apparent type I alignment observed at higher intensity will also be discussed. New applied stress PL results are presented for Si1-x-yGexCy quantum wells under various grown-in stress condition
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NRC number1195
NPARC number8899590
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Record identifier95b4f0e2-58ac-4cb2-afc9-30b603a49284
Record created2009-04-22
Record modified2016-05-09
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