Time resolved single dopant charge dynamics in silicon

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AbstractAs the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into function and limitations of conventional devices, such information enables identification of new device concepts. Atomically resolved, electronic pump-probe scanning tunneling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunneling through the surface dangling bond makes feasible what would otherwise be too weak a signal to observe. We introduce a time-resolved scanning-tunneling-spectroscopy method whereby current measurements are made before the system of study relaxes or adjusts to accommodate an applied field. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified.
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AffiliationNational Institute for Nanotechnology; Security and Disruptive Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21277127
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Record identifier974ae38e-1d43-488e-bd23-069b92ec266c
Record created2015-12-07
Record modified2016-05-09
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