Type I Band Alignment in Si1-xGex/Si(001) Quantum Wells: Photoluminescence under Applied [110] and [100] Uniaxial Stress

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DOIResolve DOI: http://doi.org/10.1103/PhysRevLett.75.866
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TypeArticle
Journal titlePhysical Review Letters
Volume75
Issue5
Pages866869; # of pages: 4
AbstractWe present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15?x?0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the [100] and [110] directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along [110] allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedNo
NPARC number12328370
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Record identifier9793c82e-e478-49d9-b668-bc7e80ae4462
Record created2009-09-10
Record modified2016-05-09
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