Magnetron sputter epitaxy (MSE) of InSb on (100) GaAs and (100, 111) InSb for infrared detector applications

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/6/12C/009
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TypeArticle
Journal titleSemiconductor Science and Technology
ISSN0268-1242
Volume6
Issue12C
PagesC42C46
AbstractThe growth of InSb-based compounds on GaAs, Si and InSb has received increased interest over the past few years due to the potential use for this material in integrated infrared imaging arrays. In this paper a new technique for the epitaxial growth of InSb is reported for the first time. The technique, based on the sputter deposition of InSb from solid InSb and Sb targets, magnetron sputter epitaxy (MSE), has been used to produce layers of relatively high structural and electrical quality and with excellent thickness uniformity and surface morphology. The electrical properties of p+/n diode test structures fabricated using these epilayers is presented.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier1040-1556
NPARC number12327635
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Record identifier97d9b282-5c77-4fab-9de1-51b51770bcc5
Record created2009-09-10
Record modified2016-05-09
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