Characterization and modeling of AlGaN/GaN heterostructure field effect transistors for low noise amplifiers

Download
  1. Get@NRC: Characterization and modeling of AlGaN/GaN heterostructure field effect transistors for low noise amplifiers (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1116/1.2186659
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Vacuum Science & Technology A
Volume24
Issue3
Pages629633; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744225
Export citationExport as RIS
Report a correctionReport a correction
Record identifier982d737c-cebd-4cf6-a74c-481389832ce4
Record created2009-10-27
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)