Thermal oxidation as a simple method to increase resolution in nanoimprint lithography

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DOIResolve DOI: http://doi.org/10.1016/j.mee.2011.08.006
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TypeArticle
Journal titleMicroelectronic Engineering
ISSN0167-9317
Volume88
Issue11
Pages32563260; # of pages: 5
SubjectFeature sizes; Nano-imprint; Pattern transfers; Positive features; Selective etching; SIMPLE method; Thermal oxidation; Thermally oxidized; Electron beam lithography; Electron beams; Optical resolving power; Oxidation; Nanoimprint lithography
AbstractWe introduce a simple thermal oxidation technique for decreasing feature sizes of nanoimprint lithography (NIL) masters. During oxidation, the dimensions of negative features are reduced (e.g., gaps become narrower), and the dimensions of positive features increase (e.g., lines become wider). We demonstrate that positive feature sizes can also be reduced after oxidation by selective etching of the oxide. We show that 74 nm gaps can be reduced to 10 nm and 226 nm lines can be narrowed to 55 nm. The reduction in feature size achieved in both positive and negative structures directly translates into increased imprint resolution, and we demonstrate improved resolution in a complete NIL pattern transfer using thermally oxidized NIL masters. © 2011 Elsevier B.V. All rights reserved.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology (NINT-INNT)
Peer reviewedYes
NPARC number21271273
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Record identifier98482102-14dc-4d40-9922-e4774ddf43ef
Record created2014-03-24
Record modified2016-05-09
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