Surface dipole layer potential induced IR absorption enhancement in n-alkanethiol SAMs on GaAs(001)

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DOIResolve DOI: http://doi.org/10.1021/1a901888q
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TypeArticle
Journal titleLangmuir
Volume25
Issue23
Pages1356113568; # of pages: 8
AbstractThe work function of n-alkanethiol self-assembledmonolayers (SAMs) prepared on theGaAs(001) surface was measured using the Kelvin probe technique yielding the SAM 2D dipole layer potential (DLP). Direct n-dependent proportionality between the DLP values and the C-H stretching mode infrared (IR) absorption intensities was observed, which supports a correspondence of reported IR enhancements with the electrostatic properties of the interface. X-ray photoelectron spectroscopy is also used to verify the work function measurements. In addition, the principal components of the refractive index tensor are shown to be n-invariant in the ordered SAM phase. Our results suggest that a local field correction to the transition dipolemoment accounts for the observed increase in IRactivity through an increase to the electronic polarizability.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Chemical Process and Environmental Technology; NRC Steacie Institute for Molecular Sciences
Peer reviewedYes
NRC number52013
NPARC number15329273
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Record identifier988f7768-35aa-40ab-852d-5cce55c5b2f5
Record created2010-05-19
Record modified2016-05-09
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