Photoluminescence properties of strained molecular-beam epitaxy Si1−xGex/Si multiquantum wells

Download
  1. Get@NRC: Photoluminescence properties of strained molecular-beam epitaxy Si1−xGex/Si multiquantum wells (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1116/1.586733
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement and Phenomena
ISSN10711023
Volume11
IssueMay 3
Pages899901; # of pages: 3
AbstractSi1−xGex/Si multiquantum well (MQW) structures grown by molecular-beam epitaxy exhibit a broad, intense photoluminescence (PL) peak ∼120 meV below the band gap energy and/or phonon-resolved, near-band gap PL, depending on the MQW strain and the growth conditions.The origins of these two PL types have been identified. For MQWs with thin alloy layers (≤40–100 Å), the SiGe PL at 2 K is dominated by boron bound–exciton annihilation, which yields phonon-resolved transitions. For thicker layers, the PL is dominated by a broad, intense peak due to exciton recombination at small (≤∼15 Å) interstitial-type platelets that occur in densities up to ∼109 cm−2/QW. Etching experiments revealed that within a given MQW the platelet density is lowest in the first grown well and progressively increases in subsequent wells with increasing strain energy density, indicating that platelet formation is strictly a morphological phenomenon.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedNo
Identifier10495228
NRC number1154
NPARC number5765191
Export citationExport as RIS
Report a correctionReport a correction
Record identifier9891ab4a-910f-4a0a-bb2b-49a85746b8ca
Record created2009-03-29
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)