Alloy broadening in photoluminescence spectra of Ga ₓ In₁₋ₓ As y P₁₋y lattice matched to InP

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DOIResolve DOI: http://doi.org/10.1063/1.356239
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TypeArticle
Journal titleJournal Of Applied Physics
Volume75
Issue5
Pages26332639; # of pages: 7
AbstractLow temperature photoluminescence measurements of Ga ₓ In₁₋ₓ As y P₁₋y alloys nearly lattice matched to InP to study the line broadening of the observed band to band and near band gap transitions in these materials were performed. We find that the dominant broadening mechanism is alloy broadening that originates from the spatial fluctuations of the band gap energy due to random anion and cation distribution. A model that assumes that occupation of the group-III sites by Ga and In atoms and of the group-V sites by As and P atoms occurs randomly, is fitted to the photoluminescence spectra of our samples. This provides an excellent description of the experimental results.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327916
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Record identifier9947b779-7e61-4438-8f03-6a377fa6960c
Record created2009-09-10
Record modified2016-05-09
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