High contrast ratio, high uniformity multiple quantum well spatial light modulators

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DOIResolve DOI: http://doi.org/10.1088/1674-4926/31/3/034007
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TypeArticle
Journal titleJournal of Semiconductors
Volume31
Issue3
Pages14; # of pages: 4
Subjectspatial light modulator; multiple quantum well; uniformity; contrast ratio; adjust layer; matching condition
AbstractOur latest research results on GaAs–AlGaAs multiple quantum well spatial light modulators are presented. The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. A contrast ratio (CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer. Both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high CR.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17400953
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Record identifier995794f8-43cc-4abc-93d4-3193513cd6cb
Record created2011-03-26
Record modified2016-05-09
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